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Si5468DC
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.028 at V GS = 10 V
0.034 at V GS = 4.5 V
I D (A) a
6
6
Q g (Typ.)
3.8 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
APPLICATIONS
1206-8 ChipFET ?
1
? System Power
- Notebook
- Netbook
D
? Load Switch
D
D
D
D
D
? Low Current DC/DC
D
S
G
Marking Code
AK XXX
Lot Traceability
G
and Date Code
Part #
Bottom View
Code
S
Ordering Information: Si5468DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
6 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
6 a
6 a,b, c
5.5 a,b, c
30
4.8
1.9 b, c
5.7
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.6
2.3 b, c
W
T A = 70 °C
1.5 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 5s R thJA
Maximum Junction-to-Foot (Drain) Steady State R thJF
45 55
18 22
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 95 °C/W.
Document Number: 69072
S09-0316-Rev. A, 02-Mar-09
www.vishay.com
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